Principles of Electron Optics: Wave optics
  • Language: en
  • Pages: 752

Principles of Electron Optics: Wave optics

  • Type: Book
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  • Published: 1994-07-13
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  • Publisher: Academic Pr

The three volumes in the PRINCIPLES OF ELECTRON OPTICS Series constitute the first comprehensive treatment of electron optics in over forty years. While Volumes 1 and 2 are devoted to geometrical optics, Volume 3 is concerned with wave optics and effects due to wave length. Subjects covered include:Derivation of the laws of electron propagation from SchrUdinger's equationImage formation and the notion of resolutionThe interaction between specimens and electronsImage processingElectron holography and interferenceCoherence, brightness, and the spectral functionTogether, these works comprise a unique and informative treatment of the subject. Volume 3, like its predecessors, will provide readers with both a textbook and an invaluable reference source.

Principles of Electron Optics
  • Language: en
  • Pages: 1188

Principles of Electron Optics

This is a complete handbook and reference volume which covers everything that one needs to know about electron optics. It is a comprehensive coverage of theoretical background and modern computing methods. It contains a detailed and unique account of numerical methods and an extensive bibliography.

Principles of Electron Optics: Applied geometrical optics
  • Language: en
  • Pages: 560

Principles of Electron Optics: Applied geometrical optics

  • Type: Book
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  • Published: 1989
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  • Publisher: Unknown

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Principles of Electron Optics: Applied geometrical optics
  • Language: en
  • Pages: 560

Principles of Electron Optics: Applied geometrical optics

  • Type: Book
  • -
  • Published: 1989
  • -
  • Publisher: Unknown

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The hologram book
  • Language: en
  • Pages: 216

The hologram book

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Annual Review of Nursing Research
  • Language: en

Annual Review of Nursing Research

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ESPRIT ’90
  • Language: en
  • Pages: 920

ESPRIT ’90

The 1990 ESPRIT Conferene is being held in Brussels from the 12th November to the 15th November. Well over 1700 participants from all over Europe and overseas are expected to attend the various events. The Conference will offer the opportunity to be updated on the results ofthe ESPRITprojects and Basic Research actions andto develop international contacts with colleagues, both within a specific branch of Information Technology and across different branches. The first three days of the Conference are devoted to presentations of Esprit projects and Basic Research actions structured into plenary and parallel sessions; the scope of the Conference has been broadened this year by the inclusion of ...

Vitiligo
  • Language: en
  • Pages: 483

Vitiligo

Vitiligo has been, until recently, a rather neglected area in dermatology and medicine. Patients complain about this situation, which has offered avenues to quacks, and has led to the near orphan status of the disease. The apparently, simple and poorly symptomatic presentation of the disease has been a strong disadvantage to its study, as compared to other common chronic skin disorders such as psoriasis and atopic dermatitis. Vitiligo is still considered by doctors as a non disease, a simple aesthetic problem. A good skin-based angle of attack is also lacking because generalized vi- ligo is clearly epitomizing the view of skin diseases as simple targets of a systemic unknown dysregulation (d...

Silicon Molecular Beam Epitaxy
  • Language: en
  • Pages: 378

Silicon Molecular Beam Epitaxy

  • Type: Book
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  • Published: 2012-12-02
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  • Publisher: Elsevier

This two-volume work covers recent developments in the single crystal growth, by molecular beam epitaxy, of materials compatible with silicon, their physical characterization, and device application. Papers are included on surface physics and related vacuum synthesis techniques such as solid phase epitaxy and ion beam epitaxy. A selection of contents: Volume I. SiGe Superlattices. SiGe strained layer superlattices (G. Abstreiter). Optical properties of strained GeSi superlattices grown on (001)Ge (T.P. Pearsall et al.). Growth and characterization of SiGe atomic layer superlattices (J.-M. Baribeau et al.). Optical properties of perfect and imperfect SiGe superlattices (K.B. Wong et al.). Con...

Heterostructures on Silicon: One Step Further with Silicon
  • Language: en
  • Pages: 368

Heterostructures on Silicon: One Step Further with Silicon

In the field of logic circuits in microelectronics, the leadership of silicon is now strongly established due to the achievement of its technology. Near unity yield of one million transistor chips on very large wafers (6 inches today, 8 inches tomorrow) are currently accomplished in industry. The superiority of silicon over other material can be summarized as follow: - The Si/Si0 interface is the most perfect passivating interface ever 2 obtained (less than 10" e y-I cm2 interface state density) - Silicon has a large thermal conductivity so that large crystals can be pulled. - Silicon is a hard material so that large wafers can be handled safely. - Silicon is thermally stable up to 1100°C s...